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F0100406B
3.3V 1.25Gbit/s Transimpedance Amplifier
03.05.27
Features
5k high transimpedance 30dB high gain Low noise (typ.3.5p/z@100MHz) Typical 900MHz O/E Bandwidth Over 30dB wide dynamic range 3.3V single Voltage supply operation Differential output AGC with proper time constant
F0100406B
3.3V 1.25Gbit/s NRZ Receiver
Transimpedance Amplifier
-
Applications
Preamplifier of an optical receiver circuit for GbE (1.25Gbit/s)
Functional Description
The F0100406B is stable GaAs integrated transimpedance amplifier. Typical Applications are for 1.25Gbit/s optical receiver circuit, for example, GbE, instrumentation, and measurement applications. The integrated feedback loop design provides broad bandwidth and stable operation. The F0100406B typically specifies a high transimpedance of 5.0 (RL=50) at a typical 900MHz O/E bandwidth (-3dB-cutoff frequency) with a dynamic range of over 30dB. It also provides a large optical input overload of more than +2dBm. Furthermore, it can operate with a low supply voltage of single +3.3V. It features a typical dissipation current of 45mA. Only chip-shipment is available for all product lineups of GaAs transimpedance amplifiers, because the packaged preamplifier cannot operate with the maximum performance owing to parasitic element of the package.
F0100406B Absolute Maximum Ratings
3.3V 1.25Gbit/s Transimpedance Amplifier
All published data at Ta=25C unless otherwise indicated. This device isn't guaranteed opto-electric characteristics in these ranges. At least, this device isn't broken in these ranges. VSS=0V Parameter Supply Voltage Input Current Ambient Operating Temperature Storage Temperature Symbol VDD Iinpeak Ta Tstg Value -0.3 to +5.0V 4 -40 to +90 -50 to 125 Units V mA C C Attentions
Recommended Operating Conditions
VSS=0V,unless specified Parameter Supply Voltage Operating Temperature Input Capacitance * Tc:Back side temperature of wafer Symbol VDD Tc* Cpd MIN. 3.10 0 Value TYP. 3.30 25 0.6 MAX. 3.60 85 Unit V C pF Attentions
F0100406B Electrical Characteristics
3.3V 1.25Gbit/s Transimpedance Amplifier
Tc*=0 to 85C, VDD=3.1 to 3.6V, VSS=0V,unless specified Parameters Symbol Test Conditions Value MIN. TYP. 45 0.95 2.1 2.1 30.0 30.0 1200 1100 190 55 55 5 5 24 MAX Units
Supply Current Input Voltage Output Voltage (positive) Output Voltage (negative) Gain (positive) Gain (negative) -3dB High Frequency Cut-off (positive) -3dB High Frequency Cut-off (positive) Input Impedance Output Impedance (positive) Output Impedance (negative) Transimpedance (positive) Transimpedance (negative) AGC time constant
IDD Vi Vop Von S21p S21n Fcp Fcn Ri Rout Rout Ztp Ztn Tagc
DC *1 *1 *1 Single-ended, f=1MHz *1 Single-ended, f=1MHz *1 S21p-3dB S21p-3dB f =1MHz, *1 f =1MHz, *1 f =1MHz, *1 RL=50,Single-ended, *2 RL=50,Single-ended ,*2 Cout=470pF
mA V V V dB dB MHz MHz k k sec
* Tc:Back side temperature of wafer *1 Test circuit is shown [Test Circuits / 1] AC Characteristics]. *2 Zt(p,n)=10^(S21(p,n)/20)x(Ri+50)/2
Optical and Electrical Characteristics
This table values are specified on condition of F0832483T. F0832483T is 2.5Gbps NRZ PIN-PD preamplifier module using F0100504B. Test circuits of F0832483T are shown in [Test Circuits]. =1.3m, VDD=VPD=+3.1~+3.6V, VSS=GND, Tcm*3=-20~+85C, unless specified Parameters Symbol Test Conditions MIN. Transimpedance O/E High Cut-off Frequency O/E Low Cut-off Frequency Equivalent Input Noise Sensitivity Overload Output Impedance *3 Tcm : case temperature *4 Show [Test Circuits / 3] Optical & Electrical Characteristics]. *5 Show [Test Circuits / 4] Sensitivity Characteristics]. Ztm Fcoeh Fcoel Inoise Pin-min Pin-max Routm RL=50,Single-ended, f =100MHz, *4 Ztm-3dB, *4 Cout=470pF f =100MHz 2.48832Gbps, PRBS2^23-1, BER=1E-10, *5 No input, f=1MHz, *4 +1 Value TYP. 5 900 17 3.5 -29 55 MAX k MHz kHz pA/Hz dBm dBm Unit
F0100406B Block Diagram
3.3V 1.25Gbit/s Transimpedance Amplifier
VDD
OUT IN OUTB
Rf
AGC
CAP COUT
VSS
Symbol VDD VSS IN OUT OUTB CAP
Description Supply Voltage Suplly Voltage Generaly Vss is connected to GND. Input Non-inverted data output, must be AC coupled. Inverted data output, must be AC coupled. Connected to outer capasitance
F0100406B Die Pad Assignment
3.3V 1.25Gbit/s Transimpedance Amplifier
A 7 6 5 4
8 3 660um
9
1 O
2
720um
No. 1 2 3 4 5 6
Symbol VDD OUTB VSS OUT VSS VDD
Center Coordinates (um) (65,65) (625,65) (625,315) (625,565) (420,565) (270,565)
No. 7 8 9
Symbol CAP VSS IN
Center Coordinates (um) (65,565) (65,415) (65,265)
O A
(0,0) (790,790)
F0100406B Test Circuits 1) AC Characteristics
3.3V 1.25Gbit/s Transimpedance Amplifier
Network Analyzer 50 Pin=-50dBm f=300kHz to 3GHz VDD IN OUT F0100406B OUTB VSS Prober 0.22uF 50
Switch
50
2) Block Diagram of F0831252T
VPD
VDD R=3k C1=200pF C2=100pF Cout=470pF CPD = 0.6pF(typical value)
Diod
R
C2
PD
VDD IN
C1 F0100406
CAP
OUT
OUTB
VSS
COUT
VSS
F0100406B 3) Optical & Electrical Characteristics
3.3V 1.25Gbit/s Transimpedance Amplifier
3.3V VPD Optical Attenuator F0831252T VDD 3.3V 0.022uF Optical Component Analyzer * * Agilent 8702 Systems 50 0.022uF
4) Sensitivity Characteristics
3.3V VPD E/O Converter Optical Attenuator F0831252T VDD 0.022uF
3.3V 0.022uF
Pulse Pattern Generator
CLK
0.22uF Comparator SEI F0321818M 50 OUT OUTB Bit Error Rate Tester
F0100406B Examples of AC Characteristics
3.3V 1.25Gbit/s Transimpedance Amplifier
F0100406B General Description
3.3V 1.25Gbit/s Transimpedance Amplifier
A transimpedance amplifier is applied as a pre-amplifier which is an amplifier for a faint photo current from a PIN photo diode (PD). The performance in terms of sensitivity, bandwidth, and so on, obtained by this transimpedance amplifier strongly depend on the capacitance brought at the input terminal; therefore, "typical", "minimum", or "maximum" parameter descriptions can not always be achieved according to the employed PD and package, the assembling design, and other technical experts. This is the major reason that there is no product lineup of packaged transimpedance amplifiers. Thus, for optimum performance of the transimpedance amplifier, it is essential for customers to design the input capacitance carefully. Hardness to electro-magnetic interference and fluctuation of a power supply voltage is also an important point of the design, because very faint photo-current floes into the transimpedance amplifier. Therefore, in the assembly design of the interconnection between a PD and a transimpedance, noise should be taken into consideration.
Recommendation SEI basically recommends The F08 series PD preamplifier modules for customers of the transimpedance amplifiers. In these modules, a transimpedace amplifier, a PD, and a noise filter circuit are mounted on a TO-18-can package hermetically sealed by a lens cap, having typically a fiber pigtail. The F08series lineups are the best choice for customers to using the F01series transimpedance amplifiers. SEI's F08 series allows the customers to resolve troublesome design issues and to shorten the development lead time.
Noise Performance F0100406B based on GaAs MES FET's shows excellent low-noise characteristics compared with IC's based on the silicon bipolar process. Many transmission systems often demand superior signal-to -noise ratio, that is, high sensitivity; F0100406B is the best Choice for such applications. The differential circuit configuration in the output enable a complete differential operation to reduce common mode noise: simple single ended output operation is also available.
Die-Chip Description F0100406B is shipped like the die-chip described above. The die thickness is typically 280um 20um with the available pad size uncovered by a passivation film of 95um square.The material of the pads is TiW/Pt/Au and the backside is metalized by Ti/Au.
F0100406B Assembling Condition
3.3V 1.25Gbit/s Transimpedance Amplifier
SEI recommends the assembling process as shown below and affirms sufficient wire-pull and die share strength. The heating time of one minute at the temperature of 310C gave satisfactory results for die-bonding with AuSn preforms. The heating and ultrasonic wire-bonding at the temperature of 150C by a ball-bonding machine effective. Quality Assurance For the F01 series products, there is only one technically inevitable drawback in terms of quality assurance which is to be impossible of the burn-in test for screening owning to die-shipment. SEI will not ship them if customers do not agree on this point. On the other hand, the lot assurance test is performed completely without any problems according to SEI's authorized rules. A microscope inspection is conducted in conformance with the MIL-STD-883C Method 2010.7.
Precautions Owing to their small dimensions, the GaAsFET's from which the F0100406B is designed are easily damaged or destroyed if subjected to large transient voltages. Such transients can be generated by power supplies when switched on if not properly decoupled. It is also possible to induce spikes from static-electricity-charged operations or ungrounded equipment.

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